Micronization of MgFe<sub>2</sub>O<sub>4</sub> particles doped with Si
نویسندگان
چکیده
منابع مشابه
ELECTRON - PHONON SCATTERING IN Si DOPED GaN
Phonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long t...
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1 Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Espoo, Finland 2 Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom 3 Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA 4 Materials Department, University of California, Santa Barbara, California 93106-5050, USA 5 Institut für Angewandte P...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2016
ISSN: 1348-6535,1882-0743
DOI: 10.2109/jcersj2.16042